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| INFRARED DETECTOR InAs photovoltaic detector P10090 series Low noise, high reliability infrared detectors (for 3 m band) InAs photovoltaic detectors have high sensitivity in the infrared region around 3 m as with PbS photoconductive detectors, and also feature low noise and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver even higher sensitivity than our convensional products (P8079 series). Features Applications l Low noise l High reliability l High detectivity (D*) l Available in multi-element arrays (custom product) l Gas analysis l Laser detection l Infrared spectrophotometry l Radiation thermometer Accessories (Optional) l Heatsink for one-stage TE-cooled type l Heatsink for two-stage TE-cooled type l Temperature controller l Infrared detector module with preamp l Amplifiers for InAs photovoltaic detector (custom-made product) A3179 A3179-01 C1103-04 P4631-01 s Specifications/Absolute maximum ratings Dimensional outline/ Windo w material * /S /S P10090-21 * Window material S: sapphire glass Active area (mm) TO-5 TO-8 Non-cooled One-stage TE-cooled Two-stage TE-cooled Thermistor power dissipation (mW) 0.2 Absolute maximum ratings Operating Reverse temperature voltage Topr VR (V) (C) Storage temperature Tstg (C) Type No. Package Cooling P10090-01 P10090-11 1 0.5 -40 to +60 -40 to +80 s Electrical and optical characteristics (Typ. unless otherwise noted) Measure ment Peak Photo condition C ut-off sensitivity sensitivity Shunt resistance w a velength Ele m e nt wavelength S Rsh te m p erature c p =p T Min. Typ. (C) (m) (m) (A/W) () () 25 3.35 3.65 1.0 40 70 -10 3.30 3.55 250 400 1.2 -30 3.25 3.45 1000 1300 D (p, 600, 1) Min. Typ. (cm* Hz 1/2 /W) (cm* Hz 1/2 /W) 3.0 x 109 4.5 x 109 1.0 x 1010 1.6 x 1010 2.0 x 1010 3.2 x 1010 NEP =p Rise time tr VR=0 V RL=50 0 to 63 % (s) 0.70 0.45 0.30 Type No. P10090-01 P10090-11 P10090-21 (W/Hz1/2) 1.5 x 10-11 5.3 x 10-12 2.8 x 10-12 1 InAs photovoltaic detector s Spectral response (D*) 10 11 P10090 series (Typ.) s Spectral response (Typ.) 1.4 1.2 P10090-21 (T= -30 C) 10 10 PHOTO SENSITIVITY (A/W) 1.0 0.8 T= -10 C 0.6 T= -30 C 0.4 0.2 D* (cm * Hz1/2/W) 109 P10090-11 (T= -10 C) P10090-01 (T=25 C) 10 8 T=25 C 107 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 WAVELENGTH (m) KIRDB0356EB WAVELENGTH (m) KIRDB0381EA s Dark current vs. reverse voltage 1 mA T=25 C (Typ.) s Shunt resistance vs. element temperature 100 k (Typ.) 10 k 100 A T= -10 C SHUNT RESISTANCE DARK CURRENT 1 k T= -30 C 10 A 100 10 1 A 0.01 0.1 1 1 -100 -80 -60 -40 -20 0 20 40 60 REVERSE VOLTAGE (V) KIRDB0382EA ELEMENT TEMPERATURE (C) KIRDB0383EA s Linearity 1000 (Typ. Ta=25 C, =1.3 m) s Sensitivity uniformity 110 100 (Typ. =1.55 m) T= -10 C OPTICAL OUTPUT POWER (A) RELATIVE SENSITIVITY (%) 90 T=10 C 80 T=25 C 70 60 50 40 30 100 10 1 1 10 100 1000 10000 20 -600 -400 -200 0 200 400 600 INCIDENT LIGHT LEVEL (W) KIRDB0384EA POSITION ON ACTIVE AREA (m) KIRDB0385EA 2 InAs photovoltaic detector s Current vs. voltage of TE-cooled type 1.6 1.4 1.2 ONE-STAGE TE-COOLED (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) P10090 series s Cooling characteristics of TE-cooled type 30 20 10 0 -10 -20 -30 -40 -50 TWO-STAGE TE-COOLED TYPE ONE-STAGE TE-COOLED TYPE (Typ. Ta=25 C, thermal resistance of heat-sink=3 C/W) 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 TWO-STAGE TE-COOLED ELEMENT TEMPERATURE (C) CURRENT (A) 0 0.4 0.8 1.2 1.6 VOLTAGE (V) KIRDB0115EB TE-COOLED CURRENT (A) KIRDB0181EA s Thermistor temperature characteristic 106 (Typ.) RESISTANCE () 105 104 103 -40 -20 0 20 ELEMENT TEMPERATURE (C) KIRDB0116EA s Measurement circuit CHOPPER 600 Hz DETECTOR BAND-PASS FILTER r.m.s. METER BLACK BODY fo=600 Hz f=60 Hz INCIDENT ENERGY: 245 W/cm2 KIRDC0075EA 3 InAs photovoltaic detector s Dimensional outlines (unit: mm) P10090-01 9.1 0.3 8.1 0.1 WINDOW 5.5 0.1 P10090 series P10090-11/-21 15.3 0.2 14 0.2 4.3 0.2 2.3 0.2 10 0.2 a 12 MIN. WINDOW 10 0.2 0.4 MAX. 18 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 5.1 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 0.2 1.0 MAX. DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR P10090-11 P10090-21 5.1 0.2 a 4.5 0.2 6.9 0.2 5.1 0.2 CASE KIRDA0119EA KIRDA0191EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1099E03 Mar. 2007 DN 4 |
Price & Availability of P10090-21
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